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PD - 93973D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15 Part Number ID 1.2A
IRHY7G30CMSE 1000V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
TM (R)
International Rectifier's RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.2 0.76 4.8 50 0.4 20 84 1.2 5.0 3.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
g
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07/24/01
IRHY7G30CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 15 4.5 -- 25 250 100 -100 44 6.0 23 25 30 77 150 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 0.76A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 0.76A VDS = 800V ,VGS=0V VDS = 800V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.2A VDS = 300V VDD = 500V, ID = 1.2A, VGS =12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage 1000 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage 2.5 gfs Forward Transconductance 0.8 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
377 43 1.4
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.2 4.8 1.2 500 690
Test Conditions
A
V ns nC Tj = 25C, IS = 1.2A, VGS = 0V Tj = 25C, IF = 1.2A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 2.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics
IRHY7G30CMSE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257) Diode Forward Voltage
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=800V, VGS=0V VGS = 12V, ID = 0.76A VGS = 12V, ID = 0.76A VGS = 0V, ID = 1.2A
Min
1000 1.4 -- -- -- -- -- --
Max
-- 4.5 100 -100 50 15 15 1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion I Br LET MeV/(mg/cm2)) 59.8 36.8 Energy (MeV) 343 305 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 200 32.6 400 400 350 250 775 39 775 775 775 775
900 800 700 600
VDS
500 400 300 200 100 0 0 -5 -10
VGS
Br I
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHY7G30CMSE
Pre-Irradiation
10
I D , Drain-to-Source Current (A)
1
I D , Drain-to-Source Current (A)
20s PULSE WIDTH T = 25 C
J
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
0.1 1 10
100
0.1 1
20s PULSE WIDTH T = 150 C
J 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.2A
I D , Drain-to-Source Current (A)
TJ = 150 C
2.0
1.5
1
TJ = 25 C
1.0
0.5
0.1 5.0
15 100V
V DS = 50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHY7G30CMSE
1250
1000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 1.2A
16
6 VDS = 800V VDS = 500V VDS = 200V
C, Capacitance (pF)
750
Ciss C oss C rss
12
500
8
250
4
0 1 10 100
0 0 10
FOR TEST CIRCUIT SEE FIGURE 13
20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10
ISD , Reverse Drain Current (A)
TJ = 150 C
1
ID, Drain-to-Source Current (A)
1
100s 1ms
TJ = 25 C
0.1 Tc = 25C Tj = 150C Single Pulse 10 100 10ms
0.1 0.4
V GS = 0 V
0.5 0.6 0.7 0.8 0.9 1.0
0.01 1000 10000 VDS , Drain-toSource Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY7G30CMSE
Pre-Irradiation
1.5
VDS VGS
RD
1.2
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
0.9
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.6
Fig 10a. Switching Time Test Circuit
0.3
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHY7G30CMSE
200
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
160
TOP BOTTOM ID 0.5A 0.8A 1.2A
VD S
L
D R IV E R
120
RG
D .U .T.
IA S tp
+ - VD D
A
80
VGS 20V
0 .0 1
40
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY7G30CMSE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 130 mH Peak IL = 1.2A, VGS = 12V ISD 1.2A, di/dt 165A/s, VDD 600V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 800 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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